透明导电铟铋氧化物薄膜的制备及其性能

以氧化铟为主体材料,以铋为掺杂材料,采用真空热蒸发方法研制出2.5%铋掺杂的透明导电氧化物薄膜(IBO)。实验表明:IBO薄膜具有良好的表面形貌,载流子浓度为3.955×1019cm-3,载流子迁移率达到50.21cm2·V-1·s-1,电导率为3.143×10-3Ω·cm,在可见光范围内的平均透过率超过82%,功函数为4.76eV。采用其作为阳极制作的OLED得到最大亮度30230cd/m2,最大电流效率为5.1cd/A。结果表明IBO是一种良好的光电器件阳极材料。

Fabrication and Characteristics of Transparent Conducting Bismuth-doped Thin Indium Oxide Film

Transparent conducting thin indium bismuth oxide (IBO) film was prepared by using a modification-specific reactive thermal co-evaporation method. The room temperature carrier concentrations, resistivities and Hall carrier mobilities of the IBO coating were estimated from Hall effect measurement system. Transmittance spectra were measured with a Shimadzu UV-3101PC spectrophotometer. A field emission scanning electron microscopy (SEM) Hitachi S-4800 and GENE SIS2000 XMS 60S (EDAX Inc.) were used to investigate the morphology and ingredient of the IBO film, respectively. The thin IBO film shows a good optical transmittance in the visible spectra range and a electrical resistivity of 3.143×10-3 Ω·cm corresponding to a carrier density of 3.955×1019 cm-3 and a Hall mobility of 50.21 cm2·V-1·s-1, respectively. Using IBO film as the anode, organic light-emitting diode (OLED) with the structure of Glass/IBO/MoO3/NPB/Alq3/LiF/Al exhibits a high luminance of 30 230 cd/m2 and an EL efficiency of 5.1 cd/A. Our results indicated that IBO is a promising transparent conducting oxide material, and a suitable electrical contact for optoelectronic devices.