| 电场调谐InAs单量子点的发光光谱 |
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| 引用本文： | 常秀英,窦秀明,孙宝权,熊永华,倪海桥,牛智川.电场调谐InAs单量子点的发光光谱[J].物理学报,2010,59(6):4279-4282. |
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| 作者姓名： | 常秀英 窦秀明 孙宝权 熊永华 倪海桥 牛智川 |
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| 作者单位： | 中国科学院半导体研究所超晶格与微结构国家重点实验室,北京 100083 |
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| 基金项目： | 国家自然科学基金(批准号: 60676054)资助的课题. |
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| 摘 要： | 采用稳态和时间分辨发光光谱，研究了生长在p-i-n二极管结构内的InAs单量子点发光光谱的电场调谐特性.随着电场强度的增加，观察到量子点中激子发光的Stark 效应.通过选择不同波长的激光线激发量子点样品，发现随着电场强度的增加导致量子点发光强度的减弱,这是由于量子点俘获载流子概率的减小所致，而激子寿命的增加源于电场导致激子的Stark效应.
关键词：
InAs单量子点
Stark效应
电子-空穴分离
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| 关 键 词： | InAs单量子点 Stark效应 电子-空穴分离 |
| 收稿时间： | 2009-07-10 |
Tuning photoluminescence of single InAs quantum dot by electric field |
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| Chang Xiu-Ying,Dou Xiu-Ming,Sun Bao-Quan,Xiong Yong-Hua,Ni Hai-Qiao,Niu Zhi-Chuan.Tuning photoluminescence of single InAs quantum dot by electric field[J].Acta Physica Sinica,2010,59(6):4279-4282. |
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| Authors: | Chang Xiu-Ying Dou Xiu-Ming Sun Bao-Quan Xiong Yong-Hua Ni Hai-Qiao Niu Zhi-Chuan |
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| Institution: | State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory for Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | By using photoluminescence (PL) and time-resolved PL spectra, the optical properties of single InAs quantum dot (QD) embedded in the p-i-n structure have been studied under an applied electric field. With the increasing of electric field, the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD. |
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| Keywords: | single InAs quantum dot Stark effect electron-hole separation |
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