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The influence of the photoacid-generator structure on chemical amplification in a resist
Authors:S. A. Bulgakova  M. M. Dzhons  L. M. Mazanova  A. Ya. Lopatin
Affiliation:(1) Research Institute of Chemistry, Nizhni Novgorod State University, pr. Gagarina 23/5, Nizhni Novgorod, 603950, Russia;(2) Nizhni Novgorod State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia;(3) Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhni Novgorod, 603950, Russia
Abstract:The effect of structure of a photoacid generator (triarylsulfonium and diaryliodonium salts) on the trends of image formation in a chemically amplified resist based on a methyl methacrylate copolymer with methacrylic acid and ethoxyethyl methacrylate was studied. It was shown that the type and quality of image in the resist depend on the structure of the Brönsted acid produced upon UV irradiation, on postexposure bake temperature, and on exposure radiation energy.
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