| 6H-SiC单极功率器件性能的温度关系 |
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| 引用本文： | 何进,张兴.6H-SiC单极功率器件性能的温度关系[J].半导体学报,2001,22(10):1235-1239. |
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| 作者姓名： | 何进 张兴 |
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| 作者单位： | 北京大学微电子学研究所，北京100871 |
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| 摘 要： | 基于碳化硅材料电离系数和迁移率的温度依赖性 ,利用有效电离系数的 Fulop近似 ,推出了 6 H- Si C单极性功率器件击穿电压和比导通电阻的温度依赖性解析表达式 .理论预言的击穿电压和临界电场与先前的实验结果基本一致 (误差小于 10 % ) ,验证了理论模型的适用性
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| 关 键 词： | 宽禁带半导体器件 6H-SiC 电离系数 雪崩击穿 比导通电阻 温度关系 |
| 文章编号： | 0253-4177(2001)10-1235-05 |
| 修稿时间： | 2001年3月16日 |
Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices |
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| HE Jin,ZHANG Xing.Temperature Dependence of Performance of 6H-SiC Unipolar Power Devices[J].Chinese Journal of Semiconductors,2001,22(10):1235-1239. |
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| Authors: | HE Jin ZHANG Xing |
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| Abstract: | The temperature dependence of some performance of 6H SiC unipolar power devices is analyzed theoretically.By employing the temperature dependent ionization coefficient and mobility of a silicon carbide,the analytical expressions of the temperature dependent performance,such as breakdown characteristics and on resistance of 6H SiC unipolar power devices are derived in a closed form.The analytical results are compared with the experimental results,with good accordance found in the breakdown characteristics. |
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| Keywords: | wide band gap semiconductor devices 6H SiC impact ionization coefficient avalanche breakdown on resistance temperature dependence of performance |
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