Forming Process Investigation of Cux O Memory Films |
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Authors: | Lv HB Yin M Song YL Fu XF Tang L Zhou P Zhao CH Tang TA Chen BA Lin YY |
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Institution: | Fudan Univ., Shanghai; |
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Abstract: | The forming process, which is the first transition from fresh state to low resistance state, was investigated in CuxO memory films prepared by plasma-induced oxidation. X-ray photoelectron spectroscopy investigation of surface chemical bonds of CuxO films and Auger electron spectroscopy depth spectra show that the formation of a highly resistive CuO layer on the CuxO surface is the main reason for the requirement of a large forming voltage. After selectively deoxidizing the CuO into Cu2O, the need for the "forming" process disappears. |
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