时间相关穆斯堡尔谱与GaAs的119mTe离子注入

本文提出并实现了一种新的穆斯堡尔谱——时间相关穆斯堡尔谱。这是利用两步衰变^119mTe→¹¹⁹Sb→¹¹⁹Sn而获得的。测量了110keV ^119mTe加10¹⁵稳定Te/cm²注入并经600℃退火的样品在不同测量时间内的穆斯堡尔谱,分析了各谱线随ξ的变化。这里ξ是我们定义的参量,它等于Φ_Te/Φ_总,由退火时刻t_{a关键词：}

TIME DEPENDENT M?SSBAUER SPECTROSCOPY AND 119mTe IMPLANTED GaAs

A new type of M?ssbauer spectroscopy-time-dependent M?ssbauer spectroscopy isproposed and realized on the basis of using two-step decay ^119mTe→¹¹⁹Sb→¹¹⁹Sn.For the GaAs samples, implanted with dose of 110keV ^119mTe + 10¹⁵ stable Te/cm² and annealed at 600℃, the relative intensities of various lines of the M?ssbauer spectra have been measured as functions of ξ, a parameter being equal to Φ_Te/Φ_To+a1 by definition ξ itself is determined from the annealing time t_a, the initial time t_i and the final time t_f of the measurement of each spectrum. This kind of time-dependent M?ssbauer spectroscopy can be used to investigate the change of the environment of the probe atoms in solid. The lines of M?ssbauer spectra have been identified. The problem of the environment change of Te atom in GaAs after its decay into Sb and the mechanism of the non-substitutional Te have been discussed. Our experimental results are also compared with previous data taken from M?ssbauer spectra of ¹²⁵Te and ¹²⁹Te in GaAs.
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