| Abstract: | A Bi2Sr2Co2O y/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2O y film on a commercial n-type silicon wafer by pulsed laser deposition.Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K.The transport mechanism under the forward bias can be attributed to a trapfilled space-charge-limited current conduction mechanism.Under the irradiation of a 532-nm continuous wave laser,a clear photovoltaic effect is observed and the magnitude of photovoltage increases as the temperature decreases.The results demonstrate the potential application of a Bi2Sr2Co2O y-based heterojunction in the photoelectronic devices. |
