| Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching＊ |
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| 作者姓名： | 王波 宿世臣 何苗 陈弘 吴汶波 张伟伟 王巧 陈虞龙 高优 张力 朱克宝 雷严 |
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| 作者单位： | [1]Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China [2]Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1 O0190, China |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China （Grant Nos. 2011AA03A112, 2011AA03AI06, and 2013AA03A101）, the National Natural Science Foundation of China （Grant Nos. 11204360, 61210014, and 61078046）, the Science and Technology In- novation Program of Department of Education of Guangdong Province, China （Grant No. 2012CXZD0017）, the Industry-Academia Research Union Special Fund of Guangdong Province, China （Grant No. 2012B091000169）, and the Science and Technology Innovation Platform of Industry-Academia Research Union of Guangdong Province-Ministry Cooperation Special Fund, China （Grant No. 2012B090600038）. |
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| 摘 要： | We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.
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| 关 键 词： | 电感耦合等离子体 发光二极管 反应离子刻蚀 GaN 侧壁 咬边 制造 反应离子蚀刻 |
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