首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Influence of Si doping on the structural and optical properties of InGaN epilayers
Abstract:Influences of the Si doping on the structural and optical properties of the InGaN epilayers are investigated in detail by means of high-resolution X-ray diffraction(HRXRD),photolumimescence(PL),scanning electron microscope(SEM),and atomic force microscopy(AFM).It is found that the Si doping may improve the surface morphology and crystal quality of the InGaN film and meanwhile it can also enhance the emission efficiency by increasing the electron concentration in the InGaN and suppressing the formation of V-defects,which act as nonradiative recombination centers in the InGaN,and it is proposed that the former plays a more important role in enhancing the emission efficiency in the InGaN.
Keywords:Si doping  InGaN  V-shaped defect
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号