| Abstract: | The field emission(FE) properties of vertically aligned graphene sheets(VAGSs) grown on different SiC substrates are reported.The VAGSs grown on nonpolar SiC(10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other,and show better FE features,with a lower turn-on field and a larger field enhancement factor.The VAGSs grown on polar SiC(000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%.The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed. |
