The investigation of inhomogeneities in silicon single crystals by the method of photoelectric conductivity |
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| Authors: | M Gallas J Kopešťanský V Kyslík |
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| Institution: | (1)  KD Praha, Semiconductor enterprises, Prague, Bud jovická 64, Praha 4, Czechoslovakia |
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| Abstract: | A method is described for investigating inhomogeneities in silicon single crystals which is based on the change in conductivity of the sample when the surface is illuminated. The relationship between the changes in photoelectric conductivity and the resistivity of the illuminated place, the sensitivity and resolving power of the method is discussed. |
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