Electron interaction and ‘memory’ effects in the presence of mixed disorder |
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Authors: | E.A. Galaktionov A.K. Savchenko D.A. Ritchie |
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Affiliation: | aSchool of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, UK;bCavendish laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK |
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Abstract: | We have studied the effect of electron–electron interaction in the presence of mixed disorder on the conductivity and Hall effect of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure. A parabolic, negative, temperature-dependent magnetoresistance (MR) and temperature-dependent Hall effect are observed. We show that these effects can be explained in terms of the interaction theory. In addition, a temperature independent, positive MR is observed. This classical MR is also shown to be a consequence of the mixed disorder. |
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Keywords: | Electron– electron interaction Mixed disorder Classical magnetoresistance |
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