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Formation of half-metallic MnAs and MnP layers |
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| Authors: | B N Zvonkov O V Vikhrova Yu A Danilov Yu N Drozdov A V Kudrin S A Levchuk E A Pitirimova and M V Sapozhnikov |
| Institution: | 1.Physico-Technical Research Institute,Nizhni Novgorod State University,Nizhni Novgorod,Russia;2.Research and Education Center for Physics of Solid State Nanostructures,Nizhni Novgorod State University,Nizhni Novgorod,Russia;3.Institute for Physics and Microstructures of Russian Academy of Sciences,Nizhni Novgorod,Russia;4.Faculty of Physics,Nizhni Novgorod State University,Nizhni Novgorod,Russia |
| Abstract: | Half-metallic MnAs and MnP layers were grown on GaAs substrates by the laser sputtering of a metal Mn target in a hydrogen and arsine (phosphine) flow. The effect of the arsine concentration in the gascarrier and the substrate temperature (T g = 300—450°C) on the crystal structure and electrical and magnetic properties were determined. It was shown that MnP samples grown at T g ≥ 400°C exhibit ferromagnetic properties up to 300 K, according to Hall effect measurements. |
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