Digital magnetic heterostructures based on Si and Fe |
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| Authors: | M. M. Otrokov S. A. Ostanin A. Ernst V. M. Kuznetsov E. V. Chulkov |
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| Affiliation: | 1.Tomsk State University,Tomsk,Russia;2.Max-Planck-Institut für Mikrostrukturphysik,Halle,Germany;3.Donostia International Physics Center (DIPC),Donostia-San Sebastián, Basque Country,Spain;4.Departamento de Física de Materiales and Centro de Física de Materiales (CFM) CSIC-Universidad del País Vasco/Euskal Herriko Unibertsitatea (University of the Basque Country), Facultad de Ciencias Químicas,Universidad del País Vasco/Euskal Herriko Unibertsitatea (University of the Basque Country) Barrio Sarriena s/n,Donostia-San Sebastián, Basque Country,Spain |
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| Abstract: | This paper reports on the results of ab initio calculations of the electronic and magnetic properties of Si digital heterostructures doped with a Fe monolayer of the substitutional or interstitial type. It has been revealed that, after the structural relaxation, heterostructures of both types exhibit a two-dimensional metallic behavior and a ferromagnetic ordering in the range of Si spacer thicknesses up to 19 atomic layers. The magnetization and spin polarization at the Fermi level for the heterostructures with an Fe monolayer of the substitutional type are two times higher than those for the system with an Fe monolayer of the interstitial type. |
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