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Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals |
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| Authors: | J. Carlos Rojo Leo J. Schowalter Remis Gaska Michael Shur M. A. Khan J. Yang Daniel D. Koleske |
| Affiliation: | a Crystal IS, Inc., Latham, NY 12110, USA b Rensselaer Polytechnic Institute, Troy, NY 12180, USA c Sensor Electronic Technology, Inc., Latham, NY 12110, USA d Department of ECE University of South Carolina, Columbia, SC 29208, USA e Naval Research Laboratory, Washington, DC 20375, USA |
| Abstract: | A comparative study of epitaxy of AlN, GaN and their alloys, grown on c-axis and off-axis substrates of single-crystal aluminum nitride has been carried out. Growth on off-axis (>30°) substrates appears to result in rough surfaces and the absence of two-dimensional electron gas (2DEG). However, smooth morphologies were demonstrated for both homoepitaxial and heteroepitaxial growth on on-axis (<2°) substrates. On one of these oriented substrates a 2DEG, with a mobility of 1000 cm2/V s and a sheet density of 8.5×1012 cm−2 at room temperature, was also demonstrated for the first time. |
| Keywords: | A1. Substrates A3. Metalorganic chemical vapor deposition B1. Nitride B2. Semiconducting III–V |
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