Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal——oxide——semiconductor field-effect transistors (PMOSFETs)

Hot carrier injection (HCI) at high temperatures and differentvalues of gate bias V_g has been performed in order to studythe actions of negative bias temperature instability (NBTI) and hotcarriers. Hot-carrier-stress-induced damage at V_g=V_d, where V_d is the voltage of the transistor drain,increases as temperature rises, contrary to conventional hot carrierbehaviour, which is identified as being related to the NBTI. Acomparison between the actions of NBTI and hot carriers at low andhigh gate voltages shows that the damage behaviours are quitedifferent: the low gate voltage stress results in an increase intransconductance, while the NBTI-dominated high gate voltage andhigh temperature stress causes a decrease in transconductance. It isconcluded that this can be a major source of hot carrier damage atelevated temperatures and high gate voltage stressing of p-channelmetal--oxide--semiconductor field-effect transistors (PMOSFETs). Wedemonstrate a novel mode of NBTI-enhanced hot carrier degradation inPMOSFETs. A novel method to decouple the actions of NBTI from thatof hot carriers is also presented.

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal--oxide--semiconductor field-effect transistors (PMOSFETs)

Hot carrier injection (HCI) at high temperatures and differentvalues of gate bias V_g has been performed in order to studythe actions of negative bias temperature instability (NBTI) and hotcarriers. Hot-carrier-stress-induced damage at V_g=V_d, where V_d is the voltage of the transistor drain,increases as temperature rises, contrary to conventional hot carrierbehaviour, which is identified as being related to the NBTI. Acomparison between the actions of NBTI and hot carriers at low andhigh gate voltages shows that the damage behaviours are quitedifferent: the low gate voltage stress results in an increase intransconductance, while the NBTI-dominated high gate voltage andhigh temperature stress causes a decrease in transconductance. It isconcluded that this can be a major source of hot carrier damage atelevated temperatures and high gate voltage stressing of p-channelmetal--oxide--semiconductor field-effect transistors (PMOSFETs). Wedemonstrate a novel mode of NBTI-enhanced hot carrier degradation inPMOSFETs. A novel method to decouple the actions of NBTI from thatof hot carriers is also presented.