| Pseudo nanocrystal silicon induced .luminescence enhancement in a-Si/SiO2 multilayers |
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| 引用本文： | 韩培高,马忠元,夏正月,陈德媛,徐骏,钱波,陈三,李伟,黄信凡,陈坤基,冯端. Pseudo nanocrystal silicon induced .luminescence enhancement in a-Si/SiO2 multilayers[J]. 中国物理, 2007, 16(5): 1410-1416 |
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| 作者姓名： | 韩培高 马忠元 夏正月 陈德媛 徐骏 钱波 陈三 李伟 黄信凡 陈坤基 冯端 |
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| 作者单位： | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China;National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093,China |
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| 基金项目： | Project supported by the NaturalScience Foundation of Jiangsu Province, China (Grant No BK 2004410),the National Natural Science Foundation of China (Grant Nos60508009, 90301009, 60471021 and 60571008), and the State KeyProgram for Basic Research of C |
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| 摘 要： | Enhanced photoluminescence （PL） at room temperature from thermally annealed a-Si：H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy （XHRTEM） and x-ray diffraction （XRD） techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 nm and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal （p-nc-Si） silicon, and the PL band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.
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| 关 键 词： | 伪纳米晶 纳米硅 光致发光 非晶硅/二氧化硅多层膜 |
| 收稿时间： | 2006-07-20 |
| 修稿时间： | 2006-07-202006-11-21 |
Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers |
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| Han Pei-Gao,Ma Zhong-Yuan,Xia Zheng-Yue,Chen De-Yuan,Xu Jun,Qian Bo,Chen San,Li Wei,Huang Xin-Fan,Chen Kun-Ji and Feng Duan. Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers[J]. Chinese Physics, 2007, 16(5): 1410-1416 |
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| Authors: | Han Pei-Gao Ma Zhong-Yuan Xia Zheng-Yue Chen De-Yuan Xu Jun Qian Bo Chen San Li Wei Huang Xin-Fan Chen Kun-Ji Feng Duan |
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| Affiliation: | National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | Enhanced photoluminescence (PL) at room temperature from thermallyannealed a-Sijz{.2mm}{:}H/SiO2 multilayers is observed throughthe step-by-step thermal post-treatment. The correlation between thePL and the crystallization process is studied usingtemperature-dependent PL, Raman, cross section high-resolutiontransmission electron microscopy (X-HRTEM) and x-ray diffraction(XRD) techniques. An intensified PL band around 820nm isdiscovered from the sample annealed near the crystallization onsettemperature, which is composed of two peaks centred at 773nm and863nm, respectively. It is found that the PL band centred at863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, andthe PL band centred at 773nm is attributed to Si = O bondsstabilized in the p-nc-Si surface. |
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| Keywords: | nanometre Si photoluminescence Raman spectroscopy |
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