A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.

A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect

In this paper, a threshold voltage model for high-$k$ gate-dielectricmetal--oxide--semiconductor field-effect transistors (MOSFETs) isdeveloped, with more accurate boundary conditions of the gatedielectric derived through a conformal mapping transformation methodto consider the fringing-field effects including the influences ofhigh-$k$ gate-dielectric and sidewall spacer. Comparing with similarmodels, the proposed model can be applied to general situations wherethe gate dielectric and sidewall spacer can have different dielectricconstants. The influences of sidewall spacer and high-$k$ gatedielectric on fringing field distribution of the gate dielectric andthus threshold voltage behaviours of a MOSFET are discussed indetail.