| Si1Sb2Te3 phase change material for chalcogenide random access memory |
| |
| 引用本文： | 张挺,宋志棠,刘波,刘卫丽,封松林,陈邦明. Si1Sb2Te3 phase change material for chalcogenide random access memory[J]. 中国物理, 2007, 16(8): 2475-2478 |
| |
| 作者姓名： | 张挺 宋志棠 刘波 刘卫丽 封松林 陈邦明 |
| |
| 作者单位： | Laboratory of Nanotechnology, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050,China；Graduate School of the Chinese Academic of Sciences, Beijing 100049,China;Laboratory of Nanotechnology, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050,China;Laboratory of Nanotechnology, Shanghai Institute of Micro-system andInformation Technology, Chinese Academy of Sciences, Shanghai 200050,China;Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A. |
| |
| 基金项目： | Projectsupported by the Special Funds for Major State Basic Research Project ofChina (Grant No~2006CB302700), the National High Technology DevelopmentProgram of China (Grant No~2006AA03Z360), the Chinese Academy of Sciences(Grant No~Y2005027), Scien |
| |
| 摘 要： | This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.
|
| 关 键 词： | 相位变化 随机存取记忆 Si-Sb-Te 无定形相位 |
| 修稿时间： | 2007-01-08 |
Si1Sb2Te3 phase change material for chalcogenide random access memory |
| |
| Zhang Ting,Song Zhi-Tang,Liu Bo,Liu Wei-Li,Feng Song-Lin and Chen Bomy. Si1Sb2Te3 phase change material for chalcogenide random access memory[J]. Chinese Physics, 2007, 16(8): 2475-2478 |
| |
| Authors: | Zhang Ting Song Zhi-Tang Liu Bo Liu Wei-Li Feng Song-Lin Chen Bomy |
| |
| Affiliation: | 1.Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China ;2. Graduate School of the Chinese Academic of Sciences, Beijing 100049, China ;3. Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086 U.S.A. |
| |
| Abstract: | phase change, chalcogenide random access memory, Si-Sb-Te |
| |
| Keywords: | phase change chalcogenide random access memory Si--Sb--Te |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|
