| MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs |
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| 引用本文： | 程知群,蔡勇,刘杰,周玉刚,LauKeiMay,ChenJ.Kevin. MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs[J]. 中国物理, 2007, 16(11): 3494-3497 |
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| 作者姓名： | 程知群 蔡勇 刘杰 周玉刚 LauKeiMay ChenJ.Kevin |
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| 作者单位： | [1]Microelectronics CAD Center,Hangzhou Dianzi University Hangzhou 310018,China [2]Department of Electrical and Computer Engineering,HongKong University of Science and Technology,HongKong,China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant No 60476035）. |
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| 摘 要： | A microwave monolithic integrated circuit （MMIC） C-band low noise amplifier （LNA） using 1 μm-gate composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN high electron mobility transistors （CC-HEMTs） has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm ×100 μm device showed very high-dynamic range with decent gain and noise figure.[第一段]
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| 关 键 词： | 噪音放大器 合成通道 A1GaN/GaN 单块集成电路 |
| 文章编号： | 1009-1963/2007/16（11）/3494-04 |
| 修稿时间： | 2006-11-13 |
MMIC LNA based novel composite-channel Al0.3 Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs |
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| Cheng Zhi-Qun,Cai Yong,Liu Jie,Zhou Yu-Gang,Lau Kei May and Chen J. Kevin. MMIC LNA based novel composite-channel Al0.3 Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs[J]. Chinese Physics, 2007, 16(11): 3494-3497 |
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| Authors: | Cheng Zhi-Qun Cai Yong Liu Jie Zhou Yu-Gang Lau Kei May Chen J. Kevin |
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| Affiliation: | 1. Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou 310018, China;2. Department of Electrical and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China |
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| Abstract: | |
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| Keywords: | slow noise amplifier composite-channel A1GaN/GaN HEMTs linearity |
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