Electrical and optical characteristics of vanadium in 4H-SiC |
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Authors: | Wang Chao Zhang Yi-Men and Zhang Yu-Ming |
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Institution: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China |
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Abstract: | A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion
implantation. A little higher resistivity is obtained by increasing
the annealing temperature from 1450 to 1650℃. The resistivity at
room temperature is as high as 7.6×106\Omega .cm.
Significant redistribution of vanadium is not observed even after
1650℃ annealing. Temperature-dependent resistivity and optical
absorption of V-implanted samples are measured. The activation
energy of vanadium acceptor level is observed to be at about EC-1.1eV. |
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Keywords: | semi-insulating 4H-SiC vanadium
ion implantation annealing activation energy |
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