The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

In this paper the temperature dependence of responsivity and responsetime for 6H-SiC ultraviolet (UV) photodetector is simulated based onnumerical model in the range from 300K to 900K. The simulationresults show that the responsivity and the response time of deviceare less sensitive to temperature and this kind of UV photodetectorhas excellent temperature stability. Also the effects of devicestructure and bias voltage on the responsivity and the response timeare presented. The thicker the drift region is, the higher theresponsivity and the longer the response time are. So the thicknessof drift region has to be carefully designed to make trade-offbetween responsivity and response time.