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Simulation of multilayer Cu/Pd(100) heteroepitaxial growth by pulse laser deposition
引用本文:吴锋民,陆杭军,方允樟,黄仕华. Simulation of multilayer Cu/Pd(100) heteroepitaxial growth by pulse laser deposition[J]. 中国物理, 2007, 16(10): 3029-3035. DOI: 10.1088/1009-1963/16/10/035
作者姓名:吴锋民  陆杭军  方允樟  黄仕华
作者单位:Institute of Condensed Matter Physics, Zhejiang NormalUniversity, Jinhua 321004, China
基金项目:Project supported by the State KeyDevelopment Program for Basic Research of China (Grant No2006CB708612) and Natural Science Foundation for Young Scientists ofZhejiang Province, China (Grant No RC02069).
摘    要:The heteroepitaxial growth of multilayer Cu/Pd(100) thin film viapulse laser deposition (PLD) at room temperature is simulated byusing kinetic Monte Carlo (KMC) method with realistic physicalparameters. The effects of mass transport between interlayers, edgediffusion of adatoms along the islands and instantaneous depositionare considered in the simulation model. Emphasis is placed onrevealing the details of multilayer Cu/Pd(100) thin film growth andestimating the Ehrlich--Schwoebel (ES) barrier. It is shown that theinstantaneous deposition in the PLD growth gives rise to thelayer-by-layer growth mode, persisting up to about 9 monolayers (ML)of Cu/Pd(100). The ES barriers of The heteroepitaxial growth of multilayer Cu/Pd(100) thin film via pulse laser deposition (PLD) at room temperature is simulated by using kinetic Monte Carlo (KMC) method with realistic physical parameters. The effects of mass transport between interlayers, edge diffusion of adatoms along the islands and instantaneous deposition are considered in the simulation model, Emphasis is placed on revealing the details of multilayer Cu/Pd(100) thin film growth and estimating the Ehrlich-Schwoebel (ES) barrier. It is shown that the instantaneous deposition in the PLD growth gives rise to the layer-by-layer growth mode, persisting up to about 9 monolayers (ML) of Cu/Pd(100). The ES barriers of 0.08 ± 0.01 eV is estimated by comparing the KMC simulation results with the real scanning tunnelling microscopy (STM) measurements,

关 键 词:异质外延 铜 钯 脉冲激光沉积 动力学蒙特卡洛模拟 晶体生长
收稿时间:2006-12-12
修稿时间:2006-12-12

Simulation of multilayer Cu/Pd(100) heteroepitaxial growth by pulse laser deposition
Wu Feng-Min,Lu Hang-Jun,Fang Yun-Zhang and Huang Shi-Hua. Simulation of multilayer Cu/Pd(100) heteroepitaxial growth by pulse laser deposition[J]. Chinese Physics, 2007, 16(10): 3029-3035. DOI: 10.1088/1009-1963/16/10/035
Authors:Wu Feng-Min  Lu Hang-Jun  Fang Yun-Zhang  Huang Shi-Hua
Affiliation:Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China
Abstract:The heteroepitaxial growth of multilayer Cu/Pd(100) thin film viapulse laser deposition (PLD) at room temperature is simulated byusing kinetic Monte Carlo (KMC) method with realistic physicalparameters. The effects of mass transport between interlayers, edgediffusion of adatoms along the islands and instantaneous depositionare considered in the simulation model. Emphasis is placed onrevealing the details of multilayer Cu/Pd(100) thin film growth andestimating the Ehrlich--Schwoebel (ES) barrier. It is shown that theinstantaneous deposition in the PLD growth gives rise to thelayer-by-layer growth mode, persisting up to about 9 monolayers (ML)of Cu/Pd(100). The ES barriers of $0.08pm0.01$,eV is estimated bycomparing the KMC simulation results with the real scanningtunnelling microscopy (STM) measurements.
Keywords:heteroepitaxy   pulse laserdeposition   Ehrlich--Schwoebel (ES) barrier   kinetic Monte Carlosimulation
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