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Effects of deposition temperature on the structural and morphological properties of SnO2 films fabricated by pulsed laser deposition |
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| Authors: | Rakhi Khandelwal Avinashi Kapoor Sorin Grigorescu Nadya Evgenieva Stankova |
| Institution: | a Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India b Faculty of Physics, University of Bucharest, P.O. Box MG11, Bucharest-Magurele, Romania c Physics Department and INFN, University of Salento, 73100 Lecce, Italy d Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria |
| Abstract: | Tin oxide (SnO2) thin films were grown on Si (1 0 0) substrates using pulsed laser deposition (PLD) in O2 gas ambient (10 Pa) and at different substrate temperatures (RT, 150, 300 and 400 °C). The influence of the substrate temperature on the structural and morphological properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). XRD measurements showed that the almost amorphous microstructure transformed into a polycrystalline SnO2 phase. The film deposited at 400 °C has the best crystalline properties, i.e. optimum growth conditions. However, the film grown at 300 °C has minimum average root mean square (RMS) roughness of 3.1 nm with average grain size of 6.958 nm. The thickness of the thin films determined by the ellipsometer data is also presented and discussed. |
| Keywords: | SnO2 thin films Pulsed laser deposition Si substrate |
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