Parametric dispersion and amplification in semiconductor plasmas: Effects of carrier heating

Using the hydrodynamic model of a semiconductor plasma, the influence of carrier heating on the parametric dispersion and amplification has been analytically investigated in a doped III-V semiconductor, viz. n-InSb. The origin of the phenomena lies in the effective second-order optical susceptibility (χ_e⁽²⁾) arising due to the induced nonlinear current density of the medium. Using the coupled-mode theory, the threshold value of pump electric field (|E_0T|_para) and parametric gain coefficient (α_para) are obtained via χ_e⁽²⁾. The relevant experiment has not been performed. Proper selection of the doping level not only lowers |E_0T|_para required for the onset of parametric excitation but also enhances α_para. The carrier heating induced by the intense pump modifies the electron collision frequency and hence the nonlinearity of the medium, which in turn further lowers |E_0T|_para and enhances α_para by a factor of ∼10³ and ∼2×10², respectively. The results strongly suggest that the incorporation of carrier heating by the pump in the analysis leads to a better understanding of parametric processes in solids and gaseous plasmas, which can be of great use in the generation of squeezed states.