On the calculation of the linear and quadratic dielectric susceptibilities of hexagonal silicon carbide

The electron and lattice contributions to the linear and quadratic dielectric susceptibilities of the hexagonal polytype of silicon carbide 2H-SiC are calculated within the Harrison bond-orbital model. The results obtained are in satisfactory agreement with the calculations performed by other authors and are close in order of magnitude to the corresponding values for the 6H-SiC polytype.