Optical properties and electronic transitions of SnO2 thin films by reflection electron energy loss spectroscopy |
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Authors: | F Yubero VM Jimnez AR Gonzlez-Elipe |
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Institution: | Instituto de Ciencia de Materiales de Sevilla (CSIC-Universidad de Sevilla) and Dpto Q. Inorgánica, Avda. Américo Vespucio s/n, Isla de la Cartuja, 41092 Sevilla, Spain |
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Abstract: | Optical properties of SnO2 thin films in the 4–60 eV energy range are determined by reflection electron energy loss spectroscopy. Bulk and surface electron loss functions, real and imaginary parts of the dielectric function, refraction index, extinction and absorption coefficients are obtained from the analysis of the electron energy loss spectra. Electronic transitions are identified through the interpretation of the optical data. The samples ( 250–500 nm thick) were produced by ion beam-induced chemical vapor deposition. It is found that the compacity of the SnO2 thin films affects their optical properties and therefore the relative intensity of the observed electronic transitions. The advantages of this method to determine optical properties of thin films are discussed. Inelastic mean free paths (6.2, 17 and 41 Å for electrons traveling in SnO2 with kinetic energies of 300, 800 and 2000 eV, respectively) are obtained from the corresponding inelastic electron scattering cross-sections. |
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Keywords: | Semiconducting films Semiconducting tin compounds Thin films Chemical vapor deposition Electron energy loss spectroscopy Refractive index Light extinction Light absorption Electron transitions Ion beams Polycrystalline materials Electron scattering Tin oxides Reflection electron energy loss spectroscopy |
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