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Lifshitz Transitions Induced by Temperature and Surface Doping in Type‐II Weyl Semimetal Candidate Td‐WTe2
Authors:Qihang Zhang  Zhongkai Liu  Yan Sun  Haifeng Yang  Juan Jiang  Sung‐Kwan Mo  Zahid Hussain  Xiaofeng Qian  Liang Fu  Shuhua Yao  Minghui Lu  Claudia Felser  Binghai Yan  Yulin Chen  Lexian Yang
Institution:1. State Key Laboratory of Low Dimensional Quantum Physics Department of Physics and Collaborative Innovation Center of Quantum Matter Tsinghua University, Beijing 100084, P. R. China;2. School of Physical Science and Technology ShanghaiTech University and CAS‐Shanghai Science Research Center, Shanghai 200031, P.R. China;3. Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany;4. Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK;5. Laboratary of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences, Shanghai 200050, P.R. China;6. Advanced Light Source Lawrence Berkeley National Laboratory, Berkeley, CA, USA;7. Pohang Accelerator Laboratory POSTECH, Pohang 790‐784, Korea;8. Department of Materials Science and Engineering College of Engineering and College of Science Texas A&M University, College Station, TX, USA;9. Department of Physics Massachusetts Institute of Technology, Cambridge, MA, USA;10. National Laboratory of Solid State Microstructures Department of Materials Science and Engineering Nanjing University, Nanjing 210093, P.R. China
Abstract:
Keywords:angle‐resolved photoemission spectroscopy  band reconstruction  Lifshitz transition  type‐II Weyl semimetal
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