Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma‐enhanced chemical vapor deposition |
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| Authors: | Chang Wan Lee Gun Hwan Kim Seong Gu Kang Min‐A Kang Ki‐Seok An Hyungjun Kim Young Kuk Lee |
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| Affiliation: | 1. +82 42 860 7677+82 42 861 4151;2. Thin Film Materials Research Group, Korea Research Institute of Chemical Technology, Yuseong‐Gu, Daejeon, Republic of Korea;3. School of Electrical and Electronic Engineering, Yonsei University, Seodaemun‐Gu, Seoul, Republic of Korea;4. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Buk‐Gu, Gwangju, Republic of Korea |
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| Abstract: | A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi2Te3 and Sb2Te3 thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi2Te3 and Sb2Te3 thin films was observed when grown on graphene or SiO2/Si substrate. Bi2Te3 and Sb2Te3 thin films deposited on the graphene substrate were observed to be grown epitaxially along c‐axis and show very smooth surface compared to that on SiO2/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically. |
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| Keywords: | two‐dimensional materials Bi2Te3 Sb2Te3 graphene plasma‐enhanced chemical vapor deposition |
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