|
|||||
|
|
Impact of an Interfacial Layer on the Electrical Performance of p‐Channel Tin Monoxide Field‐Effect Transistors |
|
| Authors: | Sang Jin Han Sungmin Kim Jae Kyeong Jeong Hyeong Joon Kim |
| Affiliation: | 1. Department of Materials Science and Engineering, Seoul National University, Seoul 151‐742, Korea;2. Department of Electronic Engineering, Hanyang University, Seoul 133‐791, Korea |
| Abstract: | |
| Keywords: | field‐effect transistors p‐type semiconductors SiOF SnO |