Remarkable room‐temperature magnetoresistance in silicon strip devices |
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| Authors: | Hui Guo Lei Cui Yali Li Qiang Chen Xiaolong Fan Fangcong Wang Junshuai Li |
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| Affiliation: | 1. Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, and School of Physical Science and Technology, Lanzhou University, Lanzhou, P.R. China;2. Institute of Electromagnetics and Acoustics, Department of Electronic Science, and Fujian Provincial Key Laboratory of Plasma and Magnetic Resonance, Xiamen University, Xiamen, P.R. China;3. +86 9318912753+86 9318913554 |
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| Abstract: | In this paper, we report remarkable room‐temperature magnetoresistance (MR) in silicon strip devices. Saturating and non‐saturating MRs can be realized based on the measuring configurations with one top contact and ten top contacts, respectively. Using the one‐top‐contact measurement, a saturating MR ratio of ～400% is obtained at an applied voltage of only 1.0 V when the magnetic field is larger than 0.8 T. While the non‐saturating MR is achieved in the ten‐top‐contact measurement and the MR ratio is only ～155% for the 1.0 V applied voltage even under the magnetic field of 1.2 T. The differences for MR ratio values and change trends in these two measuring configurations are attributed to the enhanced Hall electric field with the increase of the top contact number. |
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| Keywords: | Keywords silicon strip devices room temperature magnetoresistance carrier scattering |
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