1. Department of Energy Systems Research, Ajou University, Suwon, Korea;2. Department of Physics, Ajou University, Suwon, Korea;3. Department of Electrical and Computer Engineering, Ajou University, Suwon, Korea;4. +82‐31‐219‐2582+82‐31‐219‐1748
Abstract:
Three planar CH3NH3PbI3 (MAPbI3) solar cells having the same structure except a hole‐extraction layer (HEL) showed distinctive difference in operation characteristics. Analysis of frequency‐dependent capacitance and dielectric‐loss spectra of the three MAPbI3 devices showed two types of recombination‐loss channels with different time constants that we attributed respectively to interface and bulk defects. Discrepancy in defect formation among the three devices with a HEL of PEDOT:PSS, NiOx, or Cu‐doped NiOx was not surprising because grain‐size distribution and crystalline quality of MAPbI3 can be affected by surface energy and morphology of underlying HELs. We were able to quantify interface and bulk defects in these MAPbI3solar cells based on systematic and simultaneous simulations of capacitance and dielectric‐loss spectra, and current–voltage characteristics by using the device simulator SCAPS.
