Bottom-up fabrication of redox-active metal complex oligomer wires on an H-terminated Si(111) surface |
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| Authors: | Maeda Hiroaki Sakamoto Ryota Nishimori Yoshihiko Sendo Junya Toshimitsu Fumiyuki Yamanoi Yoshinori Nishihara Hiroshi |
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| Affiliation: | Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-0033, Japan. |
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| Abstract: | Linear and branched Fe(tpy)(2) complex oligomer wires were quantitatively formed on hydrogen-terminated silicon wafers by means of hydrosilylation of ethynylterpyridine and following stepwise coordination reactions, and the redox property of surface-attached species and its photosensitivity can be controlled by the doping density of the silicon wafers. |
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