Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode |
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| Authors: | XJ Meng JL Sun J Yu GS Wang SL Guo JH Chu |
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| Institution: | (1) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China, CN |
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| Abstract: | A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate
and nickel acetate as the starting sources. Subsequent Pb(Zr,Ti)O3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol–gel method. It was found that the PZT thin films began to form a single
perovskite phase at a low annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor
of Pt/Pb(Zr,Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P-E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.
Received: 25 May 2000 / Accepted: 9 August 2000 / Published online: 30 November 2000 |
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| Keywords: | PACS: 77 84 Dy 77 80 Fm |
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