Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si |
| |
Authors: | S Senz A Plössl U Gösele S Zerlauth J Stangl G Bauer |
| |
Institution: | Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle (Saale), Germany, DE Institut für Halbleiterphysik, Universit?t Linz, Altenbergerstr. 69, A-4040 Linz, Austria, AT
|
| |
Abstract: | 1-y Cy epilayers were grown by MBE on (100) Si single-crystal substrates either directly on a dislocation-free or on a highly dislocated
Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction.
Cross sections were prepared for TEM investigations. Epitaxial layers of about 130 nm thickness and carbon contents up to
%at.]1.38 grown on top of dislocation-free 1-μm-thick Si buffer layers were fully strained. In TEM bright field images, no
dislocations were found. In order to introduce a high dislocation density in the Si buffer layer, the native oxide on the
substrate was only partially removed prior to growing the Si buffer. A Si1-yCy film grown on top of that highly dislocated buffer layer showed a partial stress relaxation (a∥=5.429 Å<asi=5.431 Å). The large FWHM of transverse rocking scans through the Bragg reflection corresponding to the epilayer indicates
a high defect density. TEM cross-section micrographs showed an extension of threading dislocations from the Si buffer layer
into the Si1-yCy layer.
Received: 22 April 1998/Accepted: 22 April 1998 |
| |
Keywords: | PACS: 68 55 |
本文献已被 SpringerLink 等数据库收录! |
|