Raman scattering in SnSe |
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| Authors: | P. M. Nikolić Lj. Milković P. Mihajlović B. Lavrenčić |
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| Affiliation: | (1) Institute of Physics, Belgrade University, Yugoslavia;(2) Institute !["ldquo"]("/content/l213l75594736k86/xlarge8220.gif") Jo!["Zcaron"]("/content/l213l75594736k86/xlarge381.gif") ef !["scaron"]("/content/l213l75594736k86/xlarge353.gif") tefan!["rdquo"]("/content/l213l75594736k86/xlarge8221.gif") , Ljubljana, Yugoslavia |
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| Abstract: | Zone center optical phonons in SnSe were investigated using Raman scattering data obtained here and previously reported far infrared reflectivity measurements. The values of the ratio of the pairs of interlayer force constants were calculated te be between 3·3 and 4·5. Thus it can be concluded that SnS is a layer like semiconductor but less layer like than GeS, GeSe or SnS. |
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