| 光吸收法检测GaxIn1-xAsyP1-y/InP双异质结液相外延片的室温禁带宽度 |
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| 引用本文： | 杨易,邬祥生,杨林宝,李允平.光吸收法检测GaxIn1-xAsyP1-y/InP双异质结液相外延片的室温禁带宽度[J].发光学报,1983,4(3):76-81. |
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| 作者姓名： | 杨易 邬祥生 杨林宝 李允平 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 用双光束分光光度计测定了GaxIn1-xAsyP1-y/InP双异质结外延片中四元层的禁带宽度,并和制得的发光管发射波长及计算值进行比较。部分样品用电子探针阴极荧光法对照。说明光吸收法简便、迅速、可靠。可对液相外延质量提供一定的评价。
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| 收稿时间： | 1983-03-03 |
MEASUREMENT OF ENERGY GAP(Eg) VALUES FOR GaxIn1-xAsyP1-Y/InP LPE LAYERS AT ROOM TEMPERATURE BY OPTICAL ABSORPTION METHOD |
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| Yang Yi,Wu Xiang-sheng,Yang Lin-bao,Li Yun-ping.MEASUREMENT OF ENERGY GAP(Eg) VALUES FOR GaxIn1-xAsyP1-Y/InP LPE LAYERS AT ROOM TEMPERATURE BY OPTICAL ABSORPTION METHOD[J].Chinese Journal of Luminescence,1983,4(3):76-81. |
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| Authors: | Yang Yi Wu Xiang-sheng Yang Lin-bao Li Yun-ping |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | The energy gap (Eg) values of quaternary active layers in GaxIn1-xAsyP1-Y/InP layers are measured by optical absorption method with a double-beam spectrophotometer. GaxIn1-xAsyP1-Y/InP layer was grown on(100)-oriented single-crystal InP substrates by the conventional two-phase solution LPE technique in YW-1 type furnace and with multiple-well horizontal graphite-slider boat under a Pd-purified hydrogen ambient in temperature range of 670-610C.After the LPE growth, the cleaved facet was stained with KOH+K3Fe(CN)6 solution and the layer thicknesses were measured by means of a scanning electron microscope (SEM). After polishing the substrate side of the wafers, the bandgap energy of the quaternary active layer was measured by optical absorption method. |
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