Preparation and characterization of Mg-doped ZnO thin films by sol-gel method |
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Authors: | Kai HuangZhen Tang Li ZhangJiangyin Yu Jianguo Lv Xiansong LiuFeng Liu |
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Affiliation: | a Department of Mathematics & Physics, Anhui University of Architecture, Hefei 230601, China b Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230601, China c School of Physics and Material Science, Anhui University, Hefei 230039, China d School of Mathematics and Physics, Anhui Polytechnic University, Wuhu 241000, China |
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Abstract: | Undoped and Mg-doped ZnO thin films were deposited on Si(1 0 0) and quartz substrates by the sol-gel method. The thin films were annealed at 873 K for 60 min. Microstructure, surface topography and optical properties of the thin films have been measured by X-ray diffraction (XRD), atomic force microscope (AFM), UV-vis spectrophotometer, and fluorophotometer (FL), respectively. The XRD results show that the polycrystalline with hexagonal wurtzite structure are observed for the ZnO thin film with Mg:Zn = 0.0, 0.02, and 0.04, while a secondary phase of MgO is evolved for the thin film with Mg:Zn = 0.08. The ZnO:Mg-2% thin film exhibits high c-axis preferred orientation. AFM studies reveal that rms roughness of the thin films changes from 7.89 nm to 16.9 nm with increasing Mg concentrations. PL spectra show that the UV-violet emission band around 386-402 nm and the blue emission peak about 460 nm are observed. The optical band gap calculated from absorption spectra and the resistivity of the ZnO thin films increase with increasing Mg concentration. In addition, the effects of Mg concentrations on microstructure, surface topography, PL spectra and electrical properties are discussed. |
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Keywords: | Mg-doped ZnO Sol-gel method Surface topography Optical properties |
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