Effects of electron irradiation on the properties of GZO films deposited with RF magnetron sputtering |
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| Authors: | Y.S. KimS.B. Heo H.M. LeeY.J. Lee I.S. KimM.S. Kang D.H. ChoiB.H. Lee M.G. KimDaeil Kim |
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| Affiliation: | a School of Materials Science and Engineering, University of Ulsan, Ulsan 680-749, Republic of Korea
b Innovation Planning Team, Shinki Intetmobile LTD, Yangsan 626-300, Republic of Korea |
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| Abstract: | Transparent conductive GZO films were deposited on polycarbonate substrates by electron beam assisted radio frequency (RF) magnetron sputtering and then the influence of electron irradiation on the structural, optical and electrical properties of GZO films was investigated by using X-ray diffractometry, UV-vis spectrophotometry, four point probes, atomic force microscopy and UV photoelectron spectroscopy. Sputtering power was kept constant at 3 W/cm2 during deposition, while electron irradiation energy varied from 450 to 900 eV.Electron irradiated GZO films show larger grain sizes than those of films prepared without electron irradiation, and films irradiated at 900 eV show higher optical transmittance in the visible wavelength region and lower sheet resistance (120 Ω/□) than other films. The work-function is also increased with electron irradiation energy. The highest work-function of 4.4 eV was observed in films that were electron irradiated at 900 eV. |
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| Keywords: | GZO Electron irradiation XRD Figure of merit Work-function |
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