Migration of indium ions in amorphous indium-gallium-zinc-oxide thin film transistors |
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| Authors: | Jiyeon KangKyeong-Ju Moon Tae Il LeeWoong Lee Jae-Min Myoung |
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| Affiliation: | a Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seoul 120-749, Republic of Korea
b School of Nano & Advanced Materials Engineering, Changwon National University, 9 Sarim-Dong, Changwon, Gyoungnam 641-773, Republic of Korea |
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| Abstract: | Electromigration of In in amorphous indium-gallium-zinc-oxide thin film transistors under repeated switching operation was investigated by analyzing the distribution of component elements. During the repeated switching operations up to 300 times, threshold voltage of this device increased gradually implying alteration to the internal device structures. Energy dispersive X-ray spectroscopy revealed noticeable redistribution of metallic components, especially In, in the channel layer beneath the source electrode during switching operations by the migration of metallic ions away from the source electrode, which is attributed to electromigrations similar to those observed in organic light emitting diodes having indium tin oxide electrodes. |
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| Keywords: | Thin film transistors Indium compounds Electromigration Amorphous semiconductors |
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