Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks |
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Authors: | E Martinez C GaumerS Lhostis C LicitraM Silly F SirottiO Renault |
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Institution: | a CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble cedex 09, France b ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles, France c Synchrotron SOLEIL, L’Orme des Merisiers, 91191 Gif-sur-Yvette, France |
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Abstract: | The impact of HfO:N post nitridation anneal (PNA) and gate fabrication on the physico-chemical properties of the TiN/HfO:N/SiO2/Si stack are investigated using Soft X-ray Photoelectron Spectroscopy (S-XPS) and Vacuum UltraViolet Spectroscopic Ellipsometry (VUV-SE). Defects created in the high-k during plasma nitridation are passivated by PNA under O2. Both oxygen and nitrogen diffusion is observed towards the bottom SiO2/Si interface together with a regrowth of the SiO2. These defects play a major role regarding nitrogen diffusion during gate fabrication. Without PNA, no diffusion is observed because O and N atoms are trapped inside the high-k. With PNA and simultaneous defects passivation, nitrogen from both metal gate and high-k diffuses towards the bottom SiO2/Si interface. |
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Keywords: | Metal/high-k stack TiN HfO:N Nitrogen Diffusion S-XPS VUV-SE |
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