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X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature |
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| Authors: | Lixin Hou Zhanguo Chen Xiuhuan LiuYanjun Gao Gang Jia |
| Institution: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, PR China b College of Optical and Electronical Information, Changchun University of Science and Technology, 399 Bocai Road, Changchun 130012, PR China c College of Communication Engineering, Jilin University, 5372 Nanhu Road, Changchun 130012, PR China |
| Abstract: | The defects, impurities and their bonding states of unintentionally doped cubic boron nitride (cBN) single crystals were investigated by X-ray photoelectron spectroscopy (XPS). The results indicate that nitrogen vacancy (VN) is the main native defect of the cBN crystals since the atomic ratio of B:N is always larger than 1 before Ar ion sputtering. After sputter cleaning, around 6 at% carbon, which probably comes from the growth chamber, remains in the samples as the main impurity. Carbon can substitute nitrogen lattice site and form the bonding states of C BN or CB, which can be verified by the XPS spectra of C1s, B1s and N1s. The C impurity (acceptor) and N vacancy (donor) can compose the donor-acceptor complex to affect the electrical and optical properties of cBN crystals. |
| Keywords: | Cubic boron nitride XPS Single crystal Impurities Defects |
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