Vertical ordering of islands in Ge-Si multilayers |
| |
Authors: | B Rahmati W Jäger H Trinkaus R Loo L Vescan H Lüth |
| |
Institution: | (1) Forschungszentrum Jülich GmbH, Institut für Festkörperforschung, D-52425 Jülich, Germany;(2) Forschungszentrum Jülich GmbH, Institut für Schicht- und Ionentechnik, D-52425 Jülich, Germany |
| |
Abstract: | Growth and ordering of GeSi islands in Ge-Si multilayer systems during deposition by Low-Pressure Chemical Vapour Deposition (LPCVD) at 700°C on Si (001) substrates have been investigated for different layer distances by transmission electron microscopy of cross-section and plane-view specimens. Vertical ordering of GeSi islands with almost perfect correlation is observed for distances between the Ge layers of 100 nm. At larger interlayer distances, a continuous decrease of the correlation is found. Vertical ordering in the multilayer system is modelled in terms of the elastic interaction between island nuclei in a newly forming layer and close islands in a buried layer below. Lateral ordering parallel to < 100 >, as observed previously in larger Ge-Si multilayer systems is not found in our systems, consisting of two Ge layers. This difference indicates that lateral ordering in the upper Ge layers of a large multilayer system is triggered by vertical ordering. |
| |
Keywords: | 61 16 Bg 68 35 13s 68 55- Jk 85 42 +m |
本文献已被 SpringerLink 等数据库收录! |
|