激光辐照下PV型HgCdTe探测器反常响应机理

 利用PV型探测器开路电压的表达式，并考虑探测器的温度变化建立模型，对激光辐照下PV型HgCdTe探测器开路电压的变化进行了理论计算。当激光较弱时，计算结果与实验结果符合得很好。当激光较强时，对于辐照过程当中探测器输出变化的一般性趋势以及激光完全停照后的热弛豫过程，该模型也能给出较好的解释；但对于激光开始辐照时输出下跳和激光停止辐照时输出上跳的反常现象，该模型不能给出合理的解释。分析认为，该模型较好地描述了晶格温升对探测器输出的影响，但是它没有考虑热载流子效应；当激光较强时，热载流子效应不可忽略，特别是激光开始辐照和激光停止辐照时，载流子与晶格的温度差有比较明显的快速变化，从而导致了探测器的反常响应。

Abnormal response of PV-type HgCdTe detector under intense laser irradiation

A model based on the open-circuit voltage formula of the PV-type detector, which is derived from the drift diffusion model under the steady-condition approximation, is used to calculate the responses of PV-type HgCdTe detector under laser irradiation, in which the temperature change of detector is taken in to account. The calculation results agree well with the experiment results under weak laser irradiation; when the laser intensity is higher, the calculation results show notable deviation from the experiment results, in which the output of detector decrease rapidly when the laser begins to irradiate and increase rapidly when the laser stops to irradiate. The results suggest that when the laser intensity is higher, the hot carrier effects can’t be negligible and the model used here is n