Tokyo Institute of Technology, Interdisciplinary School of Science and Engineering, Department of Electronic Chemistry, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Abstract:
New oligomers containing a pyrazine unit have been prepared: the bithienyl derivatives afforded p-type FET devices whereas the trifluoromethylphenyl derivatives showed n-type FET behavior.