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Optical characterization of nano-structured Cu2ZnSnS4 thin films deposited by GLAD technique
Institution:1. Université Tunis ElManar, Ecole Nationale d''Ingénieurs de Tunis, Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, P.O. Box 37, Le Belvédère, Tunis 1002, Tunisia;2. Institut des NanoSciences de Paris (INSP)-Sorbonne Universités, UPMC, Université Paris 6, P.O. Box 840, CNRS, 4 place Jussieu, 75252, Paris Cedex 05, France;3. Université de Tunis, Institut Préparatoire aux Etudes d''Ingénieurs de Tunis-IPEIT, 2, Rue JawaherLel Nehru, Montfleury, Tunis 1089, Tunisia;1. Solar Energy Laboratory, Department of Physics, Sree Vidyanikethan Engineering College, Tirupati, 517102, A.P., India;2. Department of Physics, Sri Venkateswara University, Tirupati, 517502, A.P., India;1. DTU Nanotech, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark;2. DTU Fotonik, Technical University of Denmark, DK-4000 Roskilde, Denmark;3. CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
Abstract:In this paper, Cu2ZnSnS4 (CZTS) thin films were elaborated at room temperature by thermal evaporation method using Glancing Angle Deposition (GLAD) technique at different incident angles γ = 00°, 20°, 40°, 60°, 75° and 85°. XRD, Raman scattering analysis, (SEM) and UV-Visible-NIR spectroscopy were used to characterize the crystalline structure, morphology and optical properties of CZTS samples. The results have showed that the ellipsometric analysis leaded to an optical anisotropy due to the structural anisotropy for CZTS samples deposited at γ = 85°. All Cu2ZnSnS4 samples exhibited a high absorption coefficient (α > 104 cm−1) and a direct optical transition varied between 1.48 eV and 2.05 eV for CZTS thin films deposited at γ = 00° and 85°, respectively. The value of the Urbach energy increased with incident angle, indeed, its value increased from 58 meV (γ = 00°) to 604 meV (γ = 75°) and decrease to be 368 meV for γ = 85°. This result is correlated with the Raman analysis. From transmittance data of CZTS thin films deposited at γ = 00°, 20° and 40° Swanepoel's method was used, to estimate the refractive index n. It allows us, using the Wemple-DiDomenico and Spitzer-Fan models, to calculate other optical parameters such as the oscillator energy E0, dispersion energy Ed, zero frequency refractive index n0, high frequency dielectric constant ε and the electric susceptibility χe. On the other hand, to have an idea about the evolution of the nonlinear optical character, the nonlinear susceptibility χ(3) and the nonlinear refractive index n2 of CZTS thin films deposited at γ = 00°, 20° and 40° were investigated. Ellipsometric measurements of CZTS thin films has leaded to an optical anisotropy for γ = 85°. In addition, the generalized ellipsometry in Jones formalism have proved this property, which can be related to the nano-columnar slanted structure as revealed by (SEM) analysis.
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