Polarization reversal behavior of an asymmetric ferroelectric thin film |
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| Institution: | 1. Centre de Développement des Technologies Avancées, CDTA - Laser Material Processing Team, PO. BOX 17 Baba-Hassen, Algiers 16303, Algeria;2. Laboratoire d''Etude des Matériaux & Instrumentations Optiques, Faculté des Sciences Exactes, Université Djillali Liabes de Sidi Bel Abbes, Sidi Bel Abbes 22000, Algeria;3. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam;4. Faculty of Electrical and Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam;5. Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, Kuala Lumpur 50603, Malaysia;6. Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, Prague 6 166 07, Czech Republic;7. Physics department, College of Science, Basrah University, Basrah, Iraq;8. Iraq University College (IUC), Al-Estiqlal St., Basrah, Iraq;1. Department of Mathematics, Lahore Leads University, Lahore, Pakistan;2. Abdus Salam School of Mathematical Sciences, GC University, Lahore, Pakistan;3. Department of Theoretical Mechanics, Technical University of Iasi, Romania;4. Academy of Romanian Scientists, 050094 Bucharest, Romania;1. Department of Computer sciences and Engineering, University of Quebec at Outaouais, 101?St-Jean-Bosco, Succursale Hull, Gatineau(PQ) J8Y 3G5, Canada;2. Département de mathématiques, École Normale Supérieure de Maroua, Université de Maroua, B.P. 46 Maroua, République du Cameroun |
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| Abstract: | Using the Landau–Khalatnikov equation of motion, the polarization reversal behavior in an asymmetric ferroelectric thin film has been studied. Our model first introduces a third power of polarization to describe the asymmetry of a ferroelectric thin film with surface transition layer, which originates from the difference between the surfaces. Interestingly, vertical drift of polarization switching behaviors was found in this system. The properties consisting of hysteresis loop, spontaneous polarization, switching current of an asymmetric ferroelectric thin film with surface transition layer are discussed. |
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