Super tiny nanoscale graphene nanoribbon field-effect transistor

Carbon material, especially the graphene nanoribbon (GNR), is well-known for its exceptional transmission properties. Graphene has become one of the most promising alternative materials for solving problems of the density scaling determined by Moore’ law. Instead of designing the structure into Schottky contacts, our transistor controls the drain current on the atomic scale by doping B/N atoms. By a regular geometric doping atoms, a good transmission performance has been achieved on a small dimension for the first time. The footprint of our transistor is 2.55 nm, including a 1.7 nm channel length and 0.425 nm contact length, the size of the footprint is 16 times smaller than the most recent work. Furthermore, the transistor also shows acceptable properties in transmission. The drain current has a good linearity with the variation of V_gs, especially in the range of 0.8 V to 1.2 V and the range of 1.8 V to 2.1 V. The on/off current ratio is 0.64 × 10² and the on-stage current density is 9.87 mA/µm.