Chemical analysis of thin films by means of SS-MS, GD-OES, and XPS demonstrated at Ir-Si thermoelectrica |
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Authors: | R Kurt V Hoffmann R Reiche W Pitschke and K Wetzig |
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Institution: | (1) Institut für Festk?rper- und Werkstofforschung Dresden, PF 270016, D-01171 Dresden, Germany, DE |
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Abstract: | Analytical methods with low detection limits were used for the investigation of Ir-Si thin films, the physical properties
of which vary strongly with the chemical composition and the amount of impurities. It is demonstrated how to solve chemical
characterization of different thermoelectric Ir-Si thin films by spark source mass spectrometry (SS-MS), glow discharge optical
emission spectroscopy (GD-OES) and X-ray photoelectron spectroscopy (XPS). The combined use of the three different facilities
allows the quantification of impurities of elements of the entire periodic system in the ppm range (down to 30 at.-ppm in
dependence on the element) incorporated in thin film samples. Additional information about the in-depth distribution of elements
or specifically bonded species can be achieved with a high depth resolution.
Received: 6 April 1998 / Revised: 9 July 1998 / Accepted: 14 July 1998 |
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