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Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique |
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| Authors: | Masayuki Kitamura Noritaka Usami Takamasa Sugawara Kenrato Kutsukake Kozo Fujiwara Yoshitaro Nose Toetsu Shishido Kazuo Nakajima |
| Institution: | Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
| Abstract: | The floating zone technique was employed to grow multicrystalline Si with controlled grain boundary configuration. Purposely designed bi-crystals were utilized as seed crystals to investigate the effect of the tilt angle from the perfect twin boundary on the growth behavior. When the growth was initiated from a bi-crystal with a Σ3 twin boundary, no particular change took place on the grain boundary configuration during growth. On the other hand, the decrease of the tilt angle during growth was observed when the growth was initiated from a bi-crystal with a tilted boundary from Σ3. This was accompanied by the appearance of new crystal grains. The reduction of the total interface energy would be a possible driving mechanism for this phenomenon. |
| Keywords: | A2 Floating zone technique A2 Seed crystals B2 Semiconducting silicon B3 Solar cells |
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